# Diffusion in Semiconductors (Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology - New Series) (Vol 33) ebook

## by C.E. Allen,D.L. Beke,H. Bracht,C.M. Bruff,M.B. Dutt,G. Erdelyi,P. Gas,F.M. d'Heurle,G.E. Murch,E.G. Seebauer,B.L. Sharma,N.A. Stolwijk

New & Forthcoming Titles Landolt-Börnstein: Numerical Data and Functional . Continuation of: Landolt-Börnstein: Zahlenwerte und Funktionen aus Physik, Chemie, Astronomie, Geophysik und Technik - 6. Auflage. Titles in this series.

New & Forthcoming Titles Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology - New Series. New & Forthcoming Titles. Home New & Forthcoming Titles. Subseries of this series. Founded by H. Landolt and R. Börnstein.

LANDOLT-BÖRNSTEIN Numerical Data and Functional Relationships in. .Table 1. Property Types HMSD1111 Example: Vol.

LANDOLT-BÖRNSTEIN Numerical Data and Functional Relationships in Science and Technology New Series Group IV. PHYSICAL CHEMISTRY Thermodynamic Properties Volume IV/10. 3 Select a numerical data file Landolt-Börnstein New Series IV/10B 4 Instructions on Using the ELBT Program on the CD Fig. 4 - Chap.

Confirmation of the Grube-Jedele Procedure in Processing Interdiffusion Data in Binary Alloys. The 1932/1933 experiments of Grube-Jedele (G-J) reveal their discovery that 0–100 at. pct diffusion penetration curves can generate monotone composition-variant interdiffusion coefficients, $$ tilde{D}left( X right) $$. G-J templated a smoothed infinite couple sectionally and sequentially curve via a set of constant $$ tilde{D} $$ error function curves with local 2- and 3-point determined. The first and second derivatives created a monotone sequence of coefficient values.

The Landolt Bornstein: Numerical Data And Functional Relationships In Science And Technology New book series by multiple authors includes books Landolt-Bvrnstein: Numerical Data and Functional Relationships in Science and Technology - New Series Gruppe/Group 3 Condensed Matter Vol, Gruppe/Group 4 Physical Chemistry V - Densities of Liquid Systems, Dichten Flüssiger Systeme Densities of Binary Aqueous Systems and Heat Cap, Landolt-Bornstein (Numerical. Data and Functional Relationships in Science and Technology), and several more.

C. E. Allen, D. L. Beke, H. Bracht, C. M. Bruff, M. B. Dutt, G. Erdélyi, P. Gas, F. d'Heurle, G. Murch, E. G. Seebauer, B. Sharma, and N. A. Stolwijk, in: Diffusion in Semiconductors and Non-Metallic Solids.

Subvolume A of two subvolumes on Diffusion in Semi-conductors and Non-Metallic Solids consists of a comprehensive and critical compilation of data for the following materials and properties: diffusion in silicon, germanium an.

Subvolume A of two subvolumes on Diffusion in Semi-conductors and Non-Metallic Solids consists of a comprehensive and critical compilation of data for the following materials and properties: diffusion in silicon, germanium and . Although most of the silicides are not semiconducting, this chapter is included here because a number of them have become integrated in the Si technology and because they were not covered in the previous volume III/26 on diffusion in metallic substances. Subvolume A contains a CD-ROM. Download (pdf, . 7 Mb) Donate Read. Epub FB2 mobi txt RTF. Converted file can differ from the original. If possible, download the file in its original format.

The present Landolt-B rnstein volume III/35 Nuclear Magnetic Resonance (NMR) Data is therefore of major interest to all scientists and engineers who intend to use NMR to study the structure and the binding of molecules. Volume III/35 "NMR-Data" is divided into several subvolumes and parts. Subvolume III/35A contains the nuclei 11B and 31P, subvolume III/35B contains the nuclei 19F and 15N, subvolume III/35C contains the nucleus 1H, subvolume III/35D contains the nucleus 13C, subvolume III/35E contains the nucleus 17O, and subvolume III/35G contains the nucleus 77Se.

Landolt-B¨ornstein, Numerical Data and Func- tional Relationships in Science and Technology, New Series, Group III: Con- densed Matter, Vo. 3, Subvolume B1, Springer-Verlag, 1999, p. 11–1 6. Le Claire, A. Rabinovitch, The Mathematical Analysis of Diffusion in Dis- locations, in: Diffusion in Crystalline Solids, . Nowick (Ed., Academic Press, In. 1984, p. 259 7. Faraday Soc. 57, 1191 (1961) 8. R. Smoluchowski, Phys. Rev. 87, 482 (1952) 9. 43, 2213 (1965) 10. Rabinovitch, J. Phys

Landolt-Börnstein, New Series. A on Diffusion in Semiconductors and B on Diffusion in Non-Metallic Solides. This separation was necessary, because the field and the number of data is too large to be compressed into a single volume only.

Landolt-Börnstein, New Series. Diffusion in Semiconductors and Non-Metallic Solids: Diffusion in Semiconductors. diffusion in semiconductors semiconductors. Bracht, . Bruff, . Erdélyi, . Gas, . d'Heurle, . This separation - we hope - also reflects the expected difference in the interets of potential users.

Diffusion in Semiconductors. Erdelyi, P.

**Diffusion in Semiconductors**

**and Non-Metallic Solids**consists of a comprehensive and critical compilation of data for the following materials and properties: diffusion in silicon, germanium and their alloys, diffusion in compound semiconductors, diffusion in silicides, chemical diffusion in bulk inhomogeneous semiconductors, grain-boundary and dislocation diffusion in semiconductors and silicides and surface diffusion on semiconductors. Although most of the silicides are not semiconducting, this chapter is included here because a number of them have become integrated in the Si technology and because they were not covered in the previous volume III/26 on diffusion in metallic substances. Subvolume A contains a CD-ROM.